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DMN6075S-7
Power MOSFET, N Channel, 60 V, 2 A, 0.085 ohm, SOT-23, Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 500+ | Kč1.964 |
| 1500+ | Kč1.951 |
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN6075S-7
Order Code3127343RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id2A
Drain Source On State Resistance0.085ohm
On Resistance Rds(on)0.069ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation800mW
Power Dissipation Pd800mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
DMN6075S-7 is a N-channel enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintains superior switching performance, making it ideal for high efficiency power management applications. Typical applications include backlighting, power management functions, DC-DC converters.
- Low input capacitance, low on-resistance
- Fast switching speed
- Drain-source voltage is 60V at TA=+25°C
- Gate-source voltage is ±20V at TA=+25°C
- Continuous drain current is 2A at TA=+25°C, VGS = 10V, steady state
- Maximum body diode forward current is 2A at TA = +25°C
- Pulsed drain current (10µs pulse, duty cycle = 1%) is 12A at TA = +25°C
- Static drain-source on-resistance is 85mohm max at VGS = 10V, ID = 3.2A, TA = +25°C
- SOT23 case
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.085ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
800mW
No. of Pins
3Pins
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Continuous Drain Current Id
2A
On Resistance Rds(on)
0.069ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
800mW
Operating Temperature Max
150°C
Qualification
-
MSL
-
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000635
Product traceability