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Product Information
ManufacturerVISHAY
Manufacturer Part NoTSKS5400S-ASZ
Order Code1469627RL
Technical Datasheet
Peak Wavelength950nm
Angle of Half Intensity30°
Diode Case StyleSide Looking
Radiant Intensity (Ie)4.5mW/Sr
Rise Time800ns
Fall Time tf-
Forward Current If(AV)100mA
Forward Voltage VF Max1.3V
Operating Temperature Min-25°C
Operating Temperature Max85°C
Automotive Qualification Standard-
Product Range-
MSL-
SVHCNo SVHC (16-Jan-2020)
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Product Overview
The TSKS5400S-ASZ is a 950nm Infrared Emitting Diode in GaAs technology with high radiant power. It is suitable for high pulse current operation and good spectral matching with Si photo-detectors. It is suitable for use in photointerrupters, transmissive sensors, gap sensors and reflective sensors.
- High reliability
- High radiant power
- High radiant intensity
- Low forward voltage
- ±30° Angle of half intensity
Technical Specifications
Peak Wavelength
950nm
Diode Case Style
Side Looking
Rise Time
800ns
Forward Current If(AV)
100mA
Operating Temperature Min
-25°C
Automotive Qualification Standard
-
MSL
-
Angle of Half Intensity
30°
Radiant Intensity (Ie)
4.5mW/Sr
Fall Time tf
-
Forward Voltage VF Max
1.3V
Operating Temperature Max
85°C
Product Range
-
SVHC
No SVHC (16-Jan-2020)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85414100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (16-Jan-2020)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000227
Product traceability