IRFR5410TRPBF
Výkonový MOSFET, P Kanál, 100 V, 13 A, 0.205 ohm, TO-252AA, Povrchová Montáž
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| Množství | |
|---|---|
| 1+ | 35.614 Kč |
| 10+ | 24.829 Kč |
| 100+ | 18.108 Kč |
| 500+ | 14.296 Kč |
| 1000+ | 13.067 Kč |
| 5000+ | 11.186 Kč |
Informace o produktu
Přehled produktu
The IRFR5410TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.
- Advanced process technology
- Fully avalanche rating
- Low static drain-to-source ON-resistance
- Dynamic dV/dt rating
Výstrahy
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technické specifikace
P Kanál
13A
TO-252AA
10V
66W
150°C
-
No SVHC (21-Jan-2025)
100V
0.205ohm
Povrchová Montáž
4V
3Pinů
-
MSL 1 - Neomezené
Technické dokumenty (3)
Alternativy pro IRFR5410TRPBF
Nalezené produkty: 2
Legislativa a životní prostředí
Country in which last significant manufacturing process was carried outZemě původu:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Osvědčení o shodě