IRLR2905TRPBF
Výkonový MOSFET, N Kanál, 55 V, 42 A, 0.027 ohm, TO-252AA, Povrchová Montáž
Upozorněte mě při naskladnění
| Množství | |
|---|---|
| 5+ | 33.607 Kč |
| 50+ | 23.249 Kč |
| 100+ | 18.359 Kč |
| 500+ | 15.073 Kč |
| 1000+ | 12.690 Kč |
Informace o produktu
Přehled produktu
The IRLR2905TRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
- Logic level gate drive
- Advanced process technology
- Fully avalanche rating
- Low static drain-to-source ON-resistance
- Dynamic dV/dt rating
Výstrahy
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technické specifikace
N Kanál
42A
TO-252AA
10V
110W
175°C
-
No SVHC (21-Jan-2025)
55V
0.027ohm
Povrchová Montáž
2V
3Pinů
-
MSL 1 - Neomezené
Technické dokumenty (3)
Alternativy pro IRLR2905TRPBF
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Legislativa a životní prostředí
Country in which last significant manufacturing process was carried outZemě původu:Mexico
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Osvědčení o shodě