DN2540N5-G
Výkonový MOSFET, N Kanál, 400 V, 500 mA, 25 ohm, TO-220AB, Skrz Desku
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| Množství | |
|---|---|
| 1+ | 42.887 Kč |
| 25+ | 35.864 Kč |
| 100+ | 32.855 Kč |
| 250+ | 32.353 Kč |
Informace o produktu
Přehled produktu
The DN2540N5-G is a 400V N-channel Depletion Mode (normally-on) Transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, the transistor is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FET is ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired.
- High input impedance
- Low input capacitance
- Fast switching speeds
- Low on-resistance
- Free from secondary breakdown
- Low input and output leakage
Technické specifikace
N Kanál
500mA
TO-220AB
0V
15W
150°C
-
No SVHC (25-Jun-2025)
400V
25ohm
Skrz Desku
-
3Pinů
-
-
Technické dokumenty (2)
Legislativa a životní prostředí
Country in which last significant manufacturing process was carried outZemě původu:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Osvědčení o shodě