Potřebujete další?
Množství | |
---|---|
1+ | 204.653 Kč |
10+ | 204.402 Kč |
25+ | 204.151 Kč |
50+ | 203.900 Kč |
100+ | 203.650 Kč |
Informace o produktu
Přehled produktu
MASTERGAN1 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 150 mΩ and 650 V drain‑source breakdown voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode. The MASTERGAN1 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions. The input pins extended range allows easy interfacing with microcontrollers, DSP units or Hall effect sensors. The MASTERGAN1 operates in the industrial temperature range, -40°C to 125°C. The device is available in a compact 9x9 mm QFN package.
- Reverse current capability
- Zero reverse recovery loss
- Dedicated pin for shutdown functionality
- Accurate internal timing match
- 3.3 V to 15V compatible inputs with hysteresis and pull-down
- Overtemperature protection
- Bill of material reduction
- Very compact and simplified layout
- Flexible, easy and fast design
Výstrahy
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technické specifikace
4.75V
10A
-
31Pinů
-
No SVHC (21-Jan-2025)
9.5V
-
QFN-EP
-
-
Technické dokumenty (2)
Alternativy pro MASTERGAN1
Nalezen 1 produkt
Související produkty
Nalezené produkty: 2
Legislativa a životní prostředí
Country in which last significant manufacturing process was carried outZemě původu:Thailand
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Osvědčení o shodě