STPSC10H065G-TR
Schottkyho Dioda s Karbidem Křemíku, 650V Série, Jedna, 650 V, 10 A, 28,5 nC, TO-263
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| Množství | |
|---|---|
| 1+ | 102.326 Kč |
| 10+ | 67.465 Kč |
| 100+ | 47.652 Kč |
| 500+ | 38.372 Kč |
| 1000+ | 35.864 Kč |
Informace o produktu
Přehled produktu
The STPSC10H065G-TR is a Power Schottky Silicon Carbide Diode features ultra high performance. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. It is especially suited for use in PFC applications and this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
- No or negligible reverse recovery
- Switching behaviour independent of temperature
- High forward surge capability
Technické specifikace
650V
650V
28.5nC
3 Piny
Povrchová Montáž
No SVHC (21-Jan-2025)
Samostatná
10A
TO-263 (D2PAK)
175°C
-
Technické dokumenty (2)
Legislativa a životní prostředí
Country in which last significant manufacturing process was carried outZemě původu:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Osvědčení o shodě