HMC358MS8GE

HMC358MS8GE is a GaAs InGaP heterojunction bipolar transistor (HBT) MMIC VCO. This integrates resonators, negative resistance devices, varactor diodes, and buffer amplifiers. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Typical application includes low noise MMIC VCO w/Buffer amplifier for C-Band applications such as UNII & Pt. to Pt. radios, 802.11a & HiperLAN WLAN, VSAT radios.

• No external resonator needed
• Frequency range from 5.8 to 6.8GHz (TA = +25° C, Vcc = +3V)
• Power output is 11dBm (typ, TA = +25°C, Vcc = +3V)
• SSB phase noise at 100KHz offset, Vtune= +5V at RFOUT is -110dBc/Hz (typ, TA = +25°C, Vcc = +3V)
• Tune voltage range from 0 to 10V (Vtune, TA = +25°C, Vcc = +3V)
• Supply current (Icc) (Vcc = +3V) is 100mA (typ, TA = +25°C, Vcc = +3V)
• Tune port leakage current (Vtune= 13V) is 10µA (max, TA = +25°C, Vcc = +3V)
• Output return loss is 9dB (typ, TA = +25°C, Vcc = +3V)
• Frequency drift rate is 0.8MHz/°C (typ, TA = +25°C, Vcc = +3V)
• 8 lead MSOP8G package, operating temperature range from -40°C to +85°C

Poznámky

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