HMC532LP4E

HMC532LP4E are GaAs InGaP heterojunction bipolar transistor (HBT) MMIC VCO with integrated resonators, negative resistance devices, varactor diodes, and buffer amplifier. Typical application includes low noise MMIC VCO w/Buffer Amplifier for VSAT radio, point to point/multipoint radio, test equipment & industrial controls, military end-use.

• No external resonator needed
• Frequency range from 7.1 to 7.9GHz (TA = +25°C, Vcc = +3V)
• Power output is 14dBm (typ, TA = +25°C, Vcc = +3V)
• SSB phase noise a 100KHz offset, Vtune= +5V at RFOUT is -101dBc/Hz (TA = +25°C, Vcc = +3V)
• Tune voltage range from 1 to 13V (Vtune, TA = +25°C, Vcc = +3V)
• Supply current (Icc) (Vcc = +3V) is 85mA (typ, TA = +25° C, Vcc = +3V)
• Tune port leakage current is 10μA (max, TA = +25° C, Vcc = +3V)
• Output return loss is 15dB (typ, TA = +25° C, Vcc = +3V)
• Frequency drift rate is 0.85MHz/°C (typ, TA = +25° C, Vcc = +3V)
• 24 lead QFN package, operating temperature range from -40 to +85°C

Poznámky

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