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| Množství | |
|---|---|
| 1+ | 247.790 Kč |
| 10+ | 201.142 Kč |
| 25+ | 191.862 Kč |
| 100+ | 175.811 Kč |
| 250+ | 167.033 Kč |
| 500+ | 166.782 Kč |
Informace o produktu
Přehled produktu
HMC849ALP4CE is a high isolation non-reflective DC to 6GHz GaAs pHEMT SPDT switch in a low cost leadless surface mount package. The switch is ideal for cellular/WiMAX/4G Infrastructure applications yielding up to 60dB isolation, low 0.8dB insertion loss and +52dBm input IP3. Power handling is excellent up through the 5 - 6GHz WiMAX band with the switch offering a P1dB compression point of +31dBm. On-chip circuitry allows a single positive voltage control of 0/+3V or 0/+5V at very low DC currents. An enable input (EN) set to logic high will put the switch in an all off state. Application includes cellular/4G infrastructure, WiMAX, WiBro and fixed wireless, automotive telematics, mobile radio and test equipment.
- Typical insertion loss is 0.9dB (DC - 2.0GHz, TA=+25°C, Vctl=0/Vdd)
- Typical isolation (RFC to RF1/RF2) is 48dB (2.0 - 4.0GHz, TA=+25°C, Vctl=0/Vdd)
- Return loss (on state) is 17dB (DC - 4.0GHz, TA=+25°C, Vctl=0/Vdd)
- Input power for 1dB compression is 24dBm (+3, 0.35 - 6.0GHz, TA=+25°C, Vctl=0/Vdd)
- Typical switching speed is 60ns (tRISE, tFALL (10/90% RF), DC - 6.0GHz, TA=+25°C, Vctl=0/Vdd)
- Operating temperature range from -40 to +85°C
- HMC849A low stress injection moulded plastic
Poznámky
ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party
Technické specifikace
0Hz
QFN-EP
3V
-40°C
-
MSL 3 - 168 hodin
6GHz
16Pinů
5V
85°C
-
No SVHC (21-Jan-2025)
Technické dokumenty (1)
Legislativa a životní prostředí
Country in which last significant manufacturing process was carried outZemě původu:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Osvědčení o shodě