Reduced PricesOffersContact UsHelpTrack Ordersčesky
Register
0
0 ItemsKč0.00
ex VAT
ex VAT

Single MOSFETs:

6 Products Found
View
Buyer
Engineer
Manufacturer
Channel Type
Transistor Polarity
Drain Source Voltage Vds
Continuous Drain Current Id
Drain Source On State Resistance
On Resistance Rds(on)
Transistor Case Style
Transistor Mounting
Rds(on) Test Voltage
Gate Source Threshold Voltage Max
Power Dissipation
Power Dissipation Pd
No. of Pins
Operating Temperature Max
Product Range
Packaging
Filter(s) Applied
1 Filter(s) Selected
ComparePrice ForQuantity
PSMNR90-40YLHX
NEXPERIA PSMNR90-40YLHX
3106441RL

Data Sheet

RoHS

Date/Lot Code

NEXPERIA
  1. Power MOSFET
  2. N Channel
  3. 40 V
  4. 300 A
  5. 940 µohm
  6. LFPAK
  7. Surface Mount
Each (Supplied on Cut Tape)
Re-Reel
Packaging Options
100+
Kč38.623
500+
Kč35.363
1000+
Kč34.861
Min: 100 / Mult: 1
N Channel
N Channel
40V
300A
940µohm
760µohm
LFPAK
Surface Mount
10V
1.7V
333W
333W
4Pins
175°C
-
SIJH112E-T1-GE3
VISHAY SIJH112E-T1-GE3
3639657RL

Data Sheet

RoHS

Date/Lot Code

VISHAY
  1. Power MOSFET
  2. N Channel
  3. 100 V
  4. 225 A
  5. 0.0028 ohm
  6. PowerPAK
  7. Surface Mount
Each (Supplied on Cut Tape)
Re-Reel
Packaging Options
100+
Kč62.449
500+
Kč60.192
1000+
Kč56.179
Min: 100 / Mult: 1
N Channel
N Channel
100V
225A
0.0028ohm
0.0023ohm
PowerPAK
Surface Mount
10V
4V
333W
333W
4Pins
175°C
TrenchFET Gen IV
SIJH800E-T1-GE3
VISHAY SIJH800E-T1-GE3
3773158RL

Data Sheet

RoHS

Date/Lot Code

VISHAY
  1. Power MOSFET
  2. N Channel
  3. 80 V
  4. 299 A
  5. 0.00155 ohm
  6. PowerPAK
  7. Surface Mount
Each (Supplied on Cut Tape)
Re-Reel
Packaging Options
100+
Kč64.706
500+
Kč53.671
1000+
Kč52.919
Min: 100 / Mult: 1
N Channel
N Channel
80V
299A
0.00155ohm
0.00122ohm
PowerPAK
Surface Mount
10V
4V
333W
333W
4Pins
175°C
TrenchFET Gen IV
SIJH600E-T1-GE3
VISHAY SIJH600E-T1-GE3
3782484RL

Data Sheet

RoHS

Date/Lot Code

VISHAY
  1. Power MOSFET
  2. N Channel
  3. 60 V
  4. 373 A
  5. 920 µohm
  6. PowerPAK
  7. Surface Mount
Each (Supplied on Cut Tape)
Re-Reel
Packaging Options
10+
Kč122.641
50+
Kč107.844
100+
Kč93.047
250+
Kč91.291
Min: 10 / Mult: 1
N Channel
N Channel
60V
373A
920µohm
650µohm
PowerPAK
Surface Mount
10V
4V
333W
333W
5Pins
175°C
TrenchFET Gen IV
PSMN1R0-40YSHX
NEXPERIA PSMN1R0-40YSHX
3106440RL

Data Sheet

RoHS

Date/Lot Code

NEXPERIA
  1. Power MOSFET
  2. N Channel
  3. 40 V
  4. 290 A
  5. 850 µohm
  6. LFPAK
  7. Surface Mount
Each (Supplied on Cut Tape)
Re-Reel
Packaging Options
100+
Kč45.144
500+
Kč37.871
1000+
Kč29.594
Min: 100 / Mult: 1
N Channel
N Channel
40V
290A
850µohm
850µohm
LFPAK
Surface Mount
10V
3V
333W
333W
4Pins
175°C
-
PSMNR51-25YLHX
NEXPERIA PSMNR51-25YLHX
3268031RL

Data Sheet

RoHS

Date/Lot Code

NEXPERIA
  1. Power MOSFET
  2. N Channel
  3. 25 V
  4. 380 A
  5. 490 µohm
  6. LFPAK56E
  7. Surface Mount
Each (Supplied on Cut Tape)
Re-Reel
Packaging Options
100+
Kč45.144
500+
Kč41.131
1000+
Kč38.372
Min: 100 / Mult: 1
N Channel
N Channel
25V
380A
490µohm
490µohm
LFPAK56E
Surface Mount
10V
1.55V
333W
333W
4Pins
175°C
NextPowerS3
1-6 of 6 items
of 1 page(s)

Popular Suppliers

ONSEMI
NEXPERIA
VISHAY
STMICROELECTRONICS
MULTICOMP PRO
INFINEON
NXP
ROHM

New Semiconductors - Discretes

TP65H035G4YS - gallium nitride (GaN) FET
RENESAS
TP65H035G4YS - gallium nitride (GaN) FET
RENESAS
G3R60MT07K – Silicon Carbide MOSFET
GENESIC SEMICONDUCTOR
G3R60MT07K – Silicon Carbide MOSFET
GENESIC SEMICONDUCTOR
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
M3S SiC Series
ONSEMI
M3S SiC Series
ONSEMI
CoolSiC™ Trench MOSFET
INFINEON
CoolSiC™ Trench MOSFET
INFINEON
EconoDUAL™ 3 product family for medium power applications
INFINEON
EconoDUAL™ 3 product family for medium power applications
INFINEON
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.
NEXPERIA
Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.
NEXPERIA
New onsemi 650v SiC MOSFETs
ONSEMI
New onsemi 650v SiC MOSFETs
ONSEMI
semi-disc-np1-nov-analog-devices-matched-bjt-arrays
ANALOG DEVICES
semi-disc-np1-nov-analog-devices-matched-bjt-arrays
ANALOG DEVICES
New Toshiba SiC Schottky Barrier Diodes
TOSHIBA
New Toshiba SiC Schottky Barrier Diodes
TOSHIBA
XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications
LITTELFUSE
XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications
LITTELFUSE
MPS Series SiC Schottky Diodes - 650V to 1.7KV
GENESIC SEMICONDUCTOR
MPS Series SiC Schottky Diodes - 650V to 1.7KV
GENESIC SEMICONDUCTOR
N-Channel Power MOSFET
INFINEON
N-Channel Power MOSFET
INFINEON
600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode
NEXPERIA
600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode
NEXPERIA
Norton Secured
BSI 9001
Visa
Mastercard
AMEX
Trade Account