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IXGR35N120B
IGBT, 70 A, 3.3 V, 200 W, 1.2 kV, TO-247AD, 3 Pins
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No Longer Manufactured
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXGR35N120B
Order Code1300113
Technical Datasheet
Continuous Collector Current70A
Collector Emitter Saturation Voltage3.3V
Power Dissipation200W
Collector Emitter Voltage Max1.2kV
Transistor Case StyleTO-247AD
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
Alternatives for IXGR35N120B
1 Product Found
Technical Specifications
Continuous Collector Current
70A
Power Dissipation
200W
Transistor Case Style
TO-247AD
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Saturation Voltage
3.3V
Collector Emitter Voltage Max
1.2kV
No. of Pins
3Pins
Transistor Mounting
Through Hole
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.005