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Quantity | Price (ex VAT) |
---|---|
5+ | Kč5.593 |
50+ | Kč3.386 |
100+ | Kč2.809 |
500+ | Kč2.658 |
1500+ | Kč2.533 |
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Multiple: 5
Kč27.96 (ex VAT)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMMBFJ310LT1G
Order Code1431340
Technical Datasheet
Gate Source Breakdown Voltage Max-25V
Zero Gate Voltage Drain Current Max60mA
Gate Source Cutoff Voltage Max-6.5V
Transistor Case StyleSOT-23
No. of Pins3 Pin
Operating Temperature Max150°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
QualificationAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The MMBFJ310LT1G is a N-channel JFET designed for high frequency amplifiers and oscillators. The device offers interchangeable drain and source, space saving surface-mount package. The Low RDS (ON) provides higher efficiency and extends battery life.
- 25VDC Drain-source voltage
- 25VDC Gate-source voltage
- 10mA Gate current
Applications
Industrial, Power Management
Technical Specifications
Gate Source Breakdown Voltage Max
-25V
Gate Source Cutoff Voltage Max
-6.5V
No. of Pins
3 Pin
Channel Type
N Channel
Product Range
-
MSL
MSL 1 - Unlimited
Zero Gate Voltage Drain Current Max
60mA
Transistor Case Style
SOT-23
Operating Temperature Max
150°C
Transistor Mounting
Surface Mount
Qualification
AEC-Q101
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000008
Product traceability