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NTMFS5C612NT1G-TE
Power MOSFET, N Channel, 60 V, 230 A, 1400 µohm, DFN, Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 10+ | Kč83.767 |
| 100+ | Kč60.443 |
| 500+ | Kč58.687 |
| 1000+ | Kč57.433 |
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Multiple: 1
Kč957.67 (ex VAT)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTMFS5C612NT1G-TE
Order Code3588873RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id230A
Drain Source On State Resistance1400µohm
Transistor Case StyleDFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation170W
No. of Pins5Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
230A
Transistor Case Style
DFN
Rds(on) Test Voltage
10V
Power Dissipation
170W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (15-Jan-2018)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
1400µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
5Pins
Product Range
-
MSL
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001
Product traceability