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PD84001
RF FET Transistor, 18 V, 1.5 A, 6 W, 1 GHz, SOT-89
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoPD84001
Order Code2341737
Technical Datasheet
Drain Source Voltage Vds18V
Continuous Drain Current Id1.5A
Power Dissipation6W
Operating Frequency Min-
Operating Frequency Max1GHz
Transistor Case StyleSOT-89
No. of Pins3Pins
Operating Temperature Max150°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
Product Overview
The PD84001 is a N-channel RF Power Transistor designed for high gain, broad band applications. It operates at 7V in common source mode at frequencies of up to 1GHz. The superior gain and efficiency makes it an ideal solution for portable radio and UHF RFID reader.
- Excellent thermal stability
- Common source configuration
- Enhancement-mode lateral field-effect transistor
- Plastic package
Applications
Industrial, RF Communications, Communications & Networking, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Drain Source Voltage Vds
18V
Power Dissipation
6W
Operating Frequency Max
1GHz
No. of Pins
3Pins
Channel Type
N Channel
Product Range
-
Continuous Drain Current Id
1.5A
Operating Frequency Min
-
Transistor Case Style
SOT-89
Operating Temperature Max
150°C
Transistor Mounting
Surface Mount
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000256