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SIS447DN-T1-GE3
Power MOSFET, P Channel, 20 V, 18 A, 7100 µohm, PowerPAK 1212, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSIS447DN-T1-GE3
Order Code3772841
Product RangeTrenchFET Gen III
Technical Datasheet
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | Kč19.011 |
| 10+ | Kč15.123 |
| 100+ | Kč12.214 |
| 500+ | Kč10.308 |
| 1000+ | Kč9.330 |
| 5000+ | Kč8.151 |
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Multiple: 1
Kč19.01 (ex VAT)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIS447DN-T1-GE3
Order Code3772841
Product RangeTrenchFET Gen III
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id18A
Drain Source On State Resistance7100µohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.2V
Power Dissipation52W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen III
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
18A
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Power Dissipation
52W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
7100µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.2V
No. of Pins
8Pins
Product Range
TrenchFET Gen III
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001
Product traceability