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Množství | |
---|---|
1+ | 45.395 Kč |
10+ | 29.594 Kč |
100+ | 18.710 Kč |
500+ | 16.678 Kč |
1000+ | 14.045 Kč |
5000+ | 13.518 Kč |
Informace o produktu
Přehled produktu
The IRF540NSTRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
- Advanced process technology
- Ultra-low ON-resistance
- Dynamic dV/dt rating
- Fast switching
- Fully avalanche rating
Technické specifikace
N Kanál
33A
TO-263 (D2PAK)
10V
130W
175°C
-
No SVHC (21-Jan-2025)
100V
0.044ohm
Povrchová Montáž
4V
3Pinů
-
MSL 1 - Neomezené
Technické dokumenty (2)
Alternativy pro IRF540NSTRLPBF
Nalezené produkty: 2
Legislativa a životní prostředí
Country in which last significant manufacturing process was carried outZemě původu:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Osvědčení o shodě