IRF7389TRPBF
Duální MOSFET, Komplementární N a P Kanál, 30 V, 30 V, 7.3 A, 7.3 A, 0.023 ohm
8 000 Nyní si můžete rezervovat zásoby na skladě
| Množství | |
|---|---|
| 5+ | 34.360 Kč |
| 50+ | 21.769 Kč |
| 250+ | 14.471 Kč |
| 1000+ | 10.333 Kč |
| 2000+ | 9.781 Kč |
Informace o produktu
Přehled produktu
The IRF7389TRPBF is a HEXFET power MOSFET in 8 pin SOIC package. This dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Generation V technology
- Ultra low ON-resistance
- Complimentary half bridge
- Fully avalanche rated
- 30V P channel and -30V N channel drain to source voltage
- 7.3A P channel and -5.3A N channel continues drain current
Výstrahy
Poptávka na trhu po tomto produktu způsobila prodloužení doby naskladnění, dodací lhůty se mohou měnit
Technické specifikace
Komplementární N a P Kanál
30V
7.3A
0.023ohm
8Pinů
2.5W
-
MSL 1 - Neomezené
30V
7.3A
0.023ohm
SOIC
2.5W
150°C
-
No SVHC (21-Jan-2025)
Technické dokumenty (3)
Související produkty
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Legislativa a životní prostředí
Country in which last significant manufacturing process was carried outZemě původu:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
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