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Quantity | Price (ex VAT) |
---|---|
1+ | Kč11.487 |
10+ | Kč11.336 |
100+ | Kč10.157 |
500+ | Kč8.828 |
1000+ | Kč8.352 |
5000+ | Kč8.176 |
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoZTX605
Order Code9525912
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo120V
Power Dissipation Pd1W
DC Collector Current1A
RF Transistor CaseTO-92
No. of Pins3Pins
DC Current Gain hFE2000hFE
Transistor MountingThrough Hole
Operating Temperature Max200°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
Product Overview
ZTX605 is a NPN silicon planar medium power Darlington transistor.
- Collector-base voltage is 140V
- Collector-emitter voltage is 120V
- Emitter-base voltage is 10V
- Peak pulse current is 4A
- Continuous collector current is 1A
- Power dissipation at Tamb=25°C is 1W
- Transition frequency is 150MHz at IC=100mA, VCE=10V, f=20MHz, Tamb = 25°C
- Input capacitance is 90pF typical at VEB=500mV, f=1MHz, Tamb = 25°C
- E-line package
- Operating and storage temperature range from -55 to +200°C
Technical Specifications
Transistor Polarity
NPN
Power Dissipation Pd
1W
RF Transistor Case
TO-92
DC Current Gain hFE
2000hFE
Operating Temperature Max
200°C
Qualification
-
Collector Emitter Voltage V(br)ceo
120V
DC Collector Current
1A
No. of Pins
3Pins
Transistor Mounting
Through Hole
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000156
Product traceability