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BF998E6327HTSA1
RF FET Transistor, 12 V, 30 mA, 200 mW, TO-252
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoBF998E6327HTSA1
Order Code4318965
Technical Datasheet
Drain Source Voltage Vds12V
Continuous Drain Current Id30mA
Power Dissipation200mW
Operating Frequency Min-
Operating Frequency Max-
Transistor Case StyleTO-252
No. of Pins4Pins
Operating Temperature Max150°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Drain Source Voltage Vds
12V
Power Dissipation
200mW
Operating Frequency Max
-
No. of Pins
4Pins
Channel Type
N Channel
Product Range
-
Continuous Drain Current Id
30mA
Operating Frequency Min
-
Transistor Case Style
TO-252
Operating Temperature Max
150°C
Transistor Mounting
Surface Mount
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000635