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No Longer Manufactured
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoMDI200-12A4
Order Code2782989
Technical Datasheet
IGBT ConfigurationSingle
Transistor PolarityN Channel
DC Collector Current270A
Continuous Collector Current270A
Collector Emitter Saturation Voltage Vce(on)2.2V
Collector Emitter Saturation Voltage2.2V
Power Dissipation Pd1.13kW
Power Dissipation1.13kW
Operating Temperature Max150°C
Collector Emitter Voltage V(br)ceo1.2kV
Junction Temperature Tj Max150°C
Transistor Case StyleModule
No. of Pins11Pins
IGBT TerminationStud
Collector Emitter Voltage Max1.2kV
IGBT TechnologyNPT IGBT [Standard]
Transistor MountingPanel
Product Range-
SVHCNo SVHC (07-Jul-2017)
Technical Specifications
IGBT Configuration
Single
DC Collector Current
270A
Collector Emitter Saturation Voltage Vce(on)
2.2V
Power Dissipation Pd
1.13kW
Operating Temperature Max
150°C
Junction Temperature Tj Max
150°C
No. of Pins
11Pins
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
No SVHC (07-Jul-2017)
Transistor Polarity
N Channel
Continuous Collector Current
270A
Collector Emitter Saturation Voltage
2.2V
Power Dissipation
1.13kW
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case Style
Module
IGBT Termination
Stud
IGBT Technology
NPT IGBT [Standard]
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85415000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Jul-2017)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.25