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LSIC1MO120E0080
Silicon Carbide MOSFET, Single, N Channel, 39 A, 1.2 kV, 0.08 ohm, TO-247
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | Kč457.459 |
| 5+ | Kč399.524 |
| 10+ | Kč341.590 |
| 50+ | Kč314.252 |
| 100+ | Kč286.915 |
| 250+ | Kč281.147 |
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Kč457.46 (ex VAT)
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoLSIC1MO120E0080
Order Code3361191
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id39A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.08ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max2.8V
Power Dissipation179W
Operating Temperature Max150°C
Product Range-
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
39A
Drain Source On State Resistance
0.08ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
2.8V
Operating Temperature Max
150°C
SVHC
To Be Advised
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
20V
Power Dissipation
179W
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002
Product traceability