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NSF040120L3A0Q
Silicon Carbide MOSFET, Single, N Channel, 66 A, 1.2 kV, 0.06 ohm, TO-247
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375 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | Kč438.649 |
| 5+ | Kč382.219 |
| 10+ | Kč325.789 |
| 50+ | Kč325.538 |
| 100+ | Kč319.018 |
| 250+ | Kč312.497 |
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Kč438.65 (ex VAT)
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoNSF040120L3A0Q
Order Code4312122
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id66A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.06ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max2.9V
Power Dissipation319W
Operating Temperature Max175°C
Product Range-
SVHCLead (21-Jan-2025)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
66A
Drain Source On State Resistance
0.06ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
2.9V
Operating Temperature Max
175°C
SVHC
Lead (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
15V
Power Dissipation
319W
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001
Product traceability