Print Page
BLS6G3135-120
RF FET Transistor, 60 V, 7.2 A, 120 W, 2.7 GHz, 3.1 GHz, SOT-502A
Image is for illustrative purposes only. Please refer to product description.
No Longer Stocked
Product Information
ManufacturerNXP
Manufacturer Part NoBLS6G3135-120
Order Code1851702
Technical Datasheet
Drain Source Voltage Vds60V
Continuous Drain Current Id7.2A
Power Dissipation120W
Operating Frequency Min2.7GHz
Operating Frequency Max3.1GHz
Transistor Case StyleSOT-502A
No. of Pins3Pins
Operating Temperature Max225°C
Channel TypeN Channel
Transistor MountingFlange
Product Range-
MSL-
SVHCNo SVHC (17-Dec-2015)
Technical Specifications
Drain Source Voltage Vds
60V
Power Dissipation
120W
Operating Frequency Max
3.1GHz
No. of Pins
3Pins
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (17-Dec-2015)
Continuous Drain Current Id
7.2A
Operating Frequency Min
2.7GHz
Transistor Case Style
SOT-502A
Operating Temperature Max
225°C
Transistor Mounting
Flange
MSL
-
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.012533