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MHT1008NT1
RF FET Transistor, 65 V, 48.1 W, 2.4 GHz, 2.5 GHz, PLD-1.5W
Image is for illustrative purposes only. Please refer to product description.
Product Information
ManufacturerNXP
Manufacturer Part NoMHT1008NT1
Order Code3370099
Technical Datasheet
Drain Source Voltage Vds65V
Continuous Drain Current Id-
Power Dissipation48.1W
Operating Frequency Min2.4GHz
Operating Frequency Max2.5GHz
Transistor Case StylePLD-1.5W
No. of Pins3Pins
Operating Temperature Max150°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
MSLMSL 3 - 168 hours
SVHCNo SVHC (27-Jun-2018)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Drain Source Voltage Vds
65V
Power Dissipation
48.1W
Operating Frequency Max
2.5GHz
No. of Pins
3Pins
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (27-Jun-2018)
Continuous Drain Current Id
-
Operating Frequency Min
2.4GHz
Transistor Case Style
PLD-1.5W
Operating Temperature Max
150°C
Transistor Mounting
Surface Mount
MSL
MSL 3 - 168 hours
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.036
Product traceability