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Quantity | Price (ex VAT) |
---|---|
1+ | Kč85.774 |
10+ | Kč63.202 |
100+ | Kč46.398 |
500+ | Kč37.620 |
1000+ | Kč36.617 |
Product Information
Product Overview
The FDB3632 is a 100V N-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
- Low miller charge
- Low Qrr body diode
- UIS Capability (single pulse and repetitive pulse)
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
80A
TO-263AB
10V
310W
175°C
-
Lead (27-Jun-2024)
100V
0.0075ohm
Surface Mount
4V
3Pins
-
-
Technical Docs (2)
Alternatives for FDB3632
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate