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FDH055N15A
Power MOSFET, N Channel, 150 V, 156 A, 0.0048 ohm, TO-247, Through Hole
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ManufacturerONSEMI
Manufacturer Part NoFDH055N15A
Order Code2825158
Product RangePowerTrench
Technical Datasheet
4,203 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | Kč169.039 |
| 5+ | Kč168.287 |
| 10+ | Kč167.534 |
| 50+ | Kč98.063 |
| 100+ | Kč94.802 |
| 250+ | Kč91.542 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDH055N15A
Order Code2825158
Product RangePowerTrench
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id156A
Drain Source On State Resistance0.0048ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation429W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangePowerTrench
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
Product Overview
FDH055N15A is a N-channel, POWERTRENCH® MOSFET. This N-channel MOSFET is produced using Onsemi’s advanced POWERTRENCH process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. The application includes synchronous rectification for ATX / sever / telecom PSU, battery protection circuit, motor drives and uninterruptible power supplies, micro solar inverter.
- Fast switching speed, low gate charge, high power and current handling capability
- High performance trench technology for extremely low RDS(on)
- Static drain to source on resistance is 4.8mohm typ (VGS = 10V, ID = 120A, TC = 25°C)
- Drain to source breakdown voltage is 150V min (ID = 250µA, VGS = 0V, TC = 25°C)
- Breakdown voltage temperature coefficient is 0.1V/°C typ (ID = 250µA, Referenced to 25°C)
- Gate threshold voltage range from 2.0 to 4.0V (VGS = VDS, ID = 250µA, 25°C)
- Input capacitance is 7100pF typ (VDS = 75V, VGS = 0V, f = 1MHz, 25°C)
- Output capacitance is 664pF typ (VDS = 75V, VGS = 0V, f = 1MHz, 25°C)
- Power dissipation is 429W (25°C)
- TO−247−3LD package, operating temperature range from -55 to + 175°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
156A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
429W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Drain Source Voltage Vds
150V
Drain Source On State Resistance
0.0048ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
PowerTrench
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.006867
Product traceability