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MJ11016G
Darlington Transistor, Darlington, NPN, 120 V, 200 W, 30 A, TO-3, 2 Pins
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | Kč139.946 |
| 10+ | Kč98.564 |
| 100+ | Kč82.764 |
| 500+ | Kč69.973 |
| 1000+ | Kč68.468 |
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Kč139.95 (ex VAT)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJ11016G
Order Code9556583
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo120V
Power Dissipation Pd200W
DC Collector Current30A
RF Transistor CaseTO-3
No. of Pins2Pins
DC Current Gain hFE200hFE
Transistor MountingThrough Hole
Operating Temperature Max200°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Product Overview
The MJ11016G is a 120V Silicon NPN Bipolar Darlington Power Transistor designed for use as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built-in base-emitter shunt resistor.
- High DC current gain
- Collector-base voltage (Vcbo = 120V)
- Emitter-base voltage (Vcbo = 5V)
Applications
Industrial
Technical Specifications
Transistor Polarity
NPN
Power Dissipation Pd
200W
RF Transistor Case
TO-3
DC Current Gain hFE
200hFE
Operating Temperature Max
200°C
Qualification
-
Collector Emitter Voltage V(br)ceo
120V
DC Collector Current
30A
No. of Pins
2Pins
Transistor Mounting
Through Hole
Product Range
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.011793