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NTBG040N120M3S
Silicon Carbide MOSFET, N Channel, 51 A, 1.2 kV, 0.052 ohm, D2PAK-7L
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ManufacturerONSEMI
Manufacturer Part NoNTBG040N120M3S
Order Code4244649RL
Product RangeEliteSiC Series
Technical Datasheet
484 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 10+ | Kč171.547 |
| 50+ | Kč149.728 |
| 100+ | Kč127.908 |
| 250+ | Kč125.400 |
Price for:Each (Supplied on Cut Tape)
Minimum: 10
Multiple: 1
Kč1,835.47 (ex VAT)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTBG040N120M3S
Order Code4244649RL
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module Configuration-
Channel TypeN Channel
Continuous Drain Current Id51A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.052ohm
Transistor Case StyleD2PAK-7L
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.4V
Power Dissipation329W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCLead (27-Jun-2024)
Technical Specifications
MOSFET Module Configuration
-
Continuous Drain Current Id
51A
Drain Source On State Resistance
0.052ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4.4V
Operating Temperature Max
175°C
SVHC
Lead (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
D2PAK-7L
Rds(on) Test Voltage
18V
Power Dissipation
329W
Product Range
EliteSiC Series
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001
Product traceability