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NTH4L014N120M3P
Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 127 A, 1.2 kV, 0.014 ohm, TO-247
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ManufacturerONSEMI
Manufacturer Part NoNTH4L014N120M3P
Order Code4079789
Product RangeEliteSiC Series
Technical Datasheet
395 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | Kč703.745 |
| 5+ | Kč609.695 |
| 10+ | Kč515.645 |
| 50+ | Kč505.362 |
| 100+ | Kč495.079 |
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Kč703.74 (ex VAT)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTH4L014N120M3P
Order Code4079789
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id127A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.014ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.63V
Power Dissipation686W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCLead (27-Jun-2024)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
127A
Drain Source On State Resistance
0.014ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
4.63V
Operating Temperature Max
175°C
SVHC
Lead (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation
686W
Product Range
EliteSiC Series
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85414900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.042033
Product traceability