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NVBG030N120M3S
Silicon Carbide MOSFET, Single, N Channel, 77 A, 1.2 kV, 0.029 ohm, TO-263 (D2PAK)
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ManufacturerONSEMI
Manufacturer Part NoNVBG030N120M3S
Order Code4244652
Product RangeEliteSiC Series
Technical Datasheet
1,575 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | Kč565.805 |
| 5+ | Kč534.455 |
| 10+ | Kč502.854 |
| 50+ | Kč454.450 |
| 100+ | Kč439.903 |
| 250+ | Kč410.560 |
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Kč565.80 (ex VAT)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVBG030N120M3S
Order Code4244652
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id77A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.029ohm
Transistor Case StyleTO-263 (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.4V
Power Dissipation348W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCLead (27-Jun-2024)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
77A
Drain Source On State Resistance
0.029ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4.4V
Operating Temperature Max
175°C
SVHC
Lead (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
18V
Power Dissipation
348W
Product Range
EliteSiC Series
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001
Product traceability