Print Page
NVBG032N065M3S
Silicon Carbide MOSFET, Single, N Channel, 52 A, 650 V, 0.044 ohm, TO-263HV (D2PAK)
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNVBG032N065M3S
Order Code4583075
Product RangeEliteSiC Series
Technical Datasheet
800 In Stock
Need more?
1-2 Working Days Delivery
Order before 17:00 standard shipping
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | Kč276.632 |
| 5+ | Kč259.829 |
| 10+ | Kč242.774 |
| 50+ | Kč226.472 |
| 100+ | Kč210.170 |
| 250+ | Kč203.399 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
Kč276.63 (ex VAT)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNVBG032N065M3S
Order Code4583075
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id52A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.044ohm
Transistor Case StyleTO-263HV (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4V
Power Dissipation200W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCNo SVHC (27-Jun-2024)
Product Overview
NVBG032N065M3S is an EliteSiC 650V M3S MOSFET in a 7 pin D2PAK package. It uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size. Typical applications include automotive on board charger and automotive DC−DC converter for EV/HEV.
- Drain to source voltage is 650V, maximum drain current is 52A
- Typical RDS(ON) = 32mohm at VGS = 18V
- Ultra low gate charge QG(tot) = 69nC
- High speed switching with low capacitance (Coss = 113pF)
- 100% avalanche tested
- AEC−Q101 qualified and PPAP capable
- Operating junction temperature range from -55 to +175°C
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
52A
Drain Source On State Resistance
0.044ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4V
Operating Temperature Max
175°C
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
TO-263HV (D2PAK)
Rds(on) Test Voltage
18V
Power Dissipation
200W
Product Range
EliteSiC Series
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001
Product traceability