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SCT055TO65G3
Silicon Carbide MOSFET, Single, N Channel, 30 A, 650 V, 0.072 ohm, TO-LL
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCT055TO65G3
Order Code4632682RL
Technical Datasheet
30 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 10+ | Kč148.223 |
| 50+ | Kč135.934 |
| 100+ | Kč123.644 |
| 250+ | Kč121.136 |
Price for:Each (Supplied on Cut Tape)
Minimum: 10
Multiple: 1
Kč1,602.23 (ex VAT)
A Kč120.00 re-reeling charge will be added for this product
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCT055TO65G3
Order Code4632682RL
Technical Datasheet
Continuous Drain Current Id30A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.072ohm
No. of Pins8Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.2V
Power Dissipation234W
Operating Temperature Max175°C
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Continuous Drain Current Id
30A
Drain Source On State Resistance
0.072ohm
Rds(on) Test Voltage
18V
Power Dissipation
234W
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
650V
No. of Pins
8Pins
Gate Source Threshold Voltage Max
4.2V
Operating Temperature Max
175°C
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:To be advised
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.697
Product traceability