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SCTW35N65G2VAG
Silicon Carbide MOSFET, Single, N Channel, 45 A, 650 V, 0.045 ohm, TO-247
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCTW35N65G2VAG
Order Code3387275
Technical Datasheet
258 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | Kč354.130 |
| 5+ | Kč320.021 |
| 10+ | Kč286.163 |
| 50+ | Kč252.054 |
| 100+ | Kč232.993 |
| 250+ | Kč218.698 |
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Multiple: 1
Kč354.13 (ex VAT)
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCTW35N65G2VAG
Order Code3387275
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id45A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.045ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max3.2V
Power Dissipation240W
Operating Temperature Max200°C
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
45A
Drain Source On State Resistance
0.045ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
3.2V
Operating Temperature Max
200°C
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
TO-247
Rds(on) Test Voltage
20V
Power Dissipation
240W
Product Range
-
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0045