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| Množství | |
|---|---|
| 1+ | 266.099 Kč |
| 5+ | 227.476 Kč |
| 10+ | 188.602 Kč |
| 50+ | 182.833 Kč |
| 100+ | 181.328 Kč |
| 250+ | 178.068 Kč |
Informace o produktu
Přehled produktu
The HFA3096BZ is a NPN-PNP ultra-high frequency Bipolar Transistor Array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors.
- 3.5dB Noise figure (50Ω) at 1GHz
- <lt/>1pA Collector to collector leakage
- Complete isolation between transistors
Poznámky
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technické specifikace
Komplementární NPN a PNP
8V
37mA
150mW
130hFE
16Pinů
125°C
5.5GHz
-
No SVHC (21-Jan-2025)
8V
37mA
150mW
130hFE
SOIC
Povrchová Montáž
8GHz
-
MSL 3 - 168 hodin
Technické dokumenty (2)
Legislativa a životní prostředí
Country in which last significant manufacturing process was carried outZemě původu:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Osvědčení o shodě